Datasheet > 2SC3647R

2SC3647R

更新时间： 2024-11-11 14:55:07

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	702K
描述
功率三极管

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中文翻译

获取价格

数据手册

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2SC3647R 数据手册

2SC3647R-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• Fast switching speed

• High breakdown voltage and large current capacity

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Applications

• Power supplies,relay derivers,lamp drivers

Absolute Maximum Ratings (T_a= 25

)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

120

100

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current

I_CM

1 ¹⁾

T_a=25

T_c=25

P_C

Collector Power Dissipation

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

125 ¹⁾

8.3

Unit

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJC

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 4

Dated: 09/05/2022 Rev:01

12 3 4

中文翻译

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