Datasheet > 2SC3647

2SC3647

更新时间： 2024-01-23 10:22:28

品牌	Logo	应用领域
科信 - KEXIN		开关高压
页数	文件大小	规格书
3页	515K
描述
High-Voltage Switching Applications

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技术参数
数据手册

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2SC3647 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	1.08	Is Samacsys：	N
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

2SC3647 数据手册

SMD Type

Transistors

High-Voltage Switching Applications

2SC3647

Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

120

100

Collector Current

Collector Current (Pulse)

I^CP

500

P^C

Collector Power Dissipation

P^{C *}

T^j

1.5

Jumction temperature

150

Storage temperature Range

Tstg

-55 to +150

* Mounted on ceramic board (250 mm²x 0.8 mm)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

100

Unit

Collector Cut-off Current

VCB = 100V , IE = 0

VEB = 4V , IC = 0

Emitter Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

V^(BR)CBOIC = 10uA , IE = 0

V^(BR)CEO

120

100

IC = 1mA , RBE =

V^(BR)EBOIE = 10uA , IC = 0

h^FEVCE = 5V , IC = 100mA

100

400

0.6

1.2

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Gain-Bandwidth Product

VCE(sat) IC = 1A , IB = 100mA

V^BE(sat)IC = 1A , IB = 100mA

0.22

0.85

120

f^T

VCE = 10V , IC = 100mA

MHz

Collector Output Capacitance

C^ob

VCB = 10V , IE = 0 , f = 1MHz

Turn-On Time

Storage Time

Fall Time

t^on

t^stg

t^f

750

See Test Circuit.

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