SMD Type
Transistors
NPN Transistors
2SC3646
1.70 0.1
■ Features
● High breakdown voltage and large current capacity.
● Fast switching speed.
● Complementary to 2SA1416
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
VCBO
VCEO
VEBO
120
V
100
6
Collector Current - Continuous
Peak Collector Current
I
C
1
2
A
mW
℃
I
CM
Collector Power Dissipation
Junction Temperature
P
C
500
T
J
150
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
120
100
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA, I
Ic= 1 mA,RBE= ∞
= 100μA, I = 0
CB= 100 V , I = 0
EB= 4V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.4
1.2
400
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=400 mA, I
B
B
=40mA
=40mA
0.1
V
C
=400 mA, I
0.85
h
FE
on
stg
V
CE= 5V, I
C= 100mA
100
Turn-ON Time
t
80
850
50
See sepcified Test Circuit.
ns
Storage Time
t
Fall Time
tf
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V,f=1MHz
CE= 10V, I = 100mA
8.5
120
pF
f
C
MHz
■ Classification of hfe
Type
Range
Marking
2SC3646-R
100-200
CBR
2SC3646-R
140-280
CBS
2SC3646-T
200-400
CBT
1
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