型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3646 | ONSEMI |
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Bipolar Transistor High breakdown voltage and large current capacity | |
2SC3646 | TYSEMI |
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Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity | |
2SC3646 | SANYO |
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High-Voltage Switching Applications | |
2SC3646 | KEXIN |
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High-Voltage Switching Applications | |
2SC3646_15 | KEXIN |
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NPN Transistors | |
2SC3646R | ETC |
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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89 | |
2SC3646-R | KEXIN |
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NPN Transistors | |
2SC3646S | ETC |
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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89 | |
2SC3646S-TD-E | ONSEMI |
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Bipolar Transistor High breakdown voltage and large current capacity | |
2SC3646T | ETC |
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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89 |