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2SC3645 PDF预览

2SC3645

更新时间: 2024-11-20 07:30:43
品牌 Logo 应用领域
科信 - KEXIN 开关高压
页数 文件大小 规格书
3页 416K
描述
High-Voltage Switching Applications

2SC3645 数据手册

 浏览型号2SC3645的Datasheet PDF文件第2页浏览型号2SC3645的Datasheet PDF文件第3页 
SMD Type  
Transistors  
High-Voltage Switching Applications  
2SC3645  
Features  
Adoption of FBET Process  
High Breakdown Voltage (VCEO = 160V)  
Excellent Linearlity of hFE and Small Cob  
Fast Switching Speed  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
180  
Unit  
V
160  
V
5
V
Collector Current  
140  
mA  
mA  
mW  
W
Collector Current (Pulse)  
ICP  
200  
PC  
500  
Collector Power Dissipation  
PC *  
Tj  
1.3  
Jumction temperature  
150  
Storage temperature Range  
Tstg  
-55 to +150  
* Mounted on ceramic board (250 mm2 x 0.8 mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
Testconditons  
Min  
100  
Typ  
Max  
100  
100  
400  
0.4  
Unit  
nA  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
VCB = 80V , IE = 0  
VEB = 4V , IC = 0  
IEBO  
nA  
hFE  
VCE = 5V , IC = 10mA  
Collector-Emitter Saturation Voltage  
Gain-Bandwidth Product  
Collector Output Capacitance  
VCE(sat) IC = 50mA , IB = 5mA  
0.14  
150  
4
V
fT  
VCE = 10V , IC = 10mA  
MHz  
pF  
Cob  
VCB = 10V , IE = 0 , f = 1MHz  
Turn-On Time  
Storage Time  
Fall Time  
ton  
tstg  
tf  
0.1  
1.5  
0.1  
See Test Circuit.  
ìs  
1
www.kexin.com.cn  

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