Datasheet > 2SC3638_2014

2SC3638_2014

更新时间： 2024-11-21 01:19:43

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	217K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC3638_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC3638

DESCRIPTION

·With TO-3PN package

·High voltage ,high speed

·High reliability

APPLICATIONS

·Ultrahigh-definition CRT display horizontal

deflection output applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

900

UNIT

Open emitter

Open base

500

Open collector

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_C=25℃

100

℃

T_j

150

T_stg

-55~150

12 3 4

中文翻译

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与2SC3638_2014相关器件

型号	品牌	获取价格	描述	数据表
2SC3642	SANYO	获取价格	Ultrahigh-Definition Display Horizontal Deflection Output Applications
2SC3643	SANYO	获取价格	Very High-Definition Display Horizontal Deflection Output Applications
2SC3644	SANYO	获取价格	Ultrahigh-Definition Display Horizontal Deflection Output Applications
2SC3645	SANYO	获取价格	High-Voltage Switching, Predriver Applications
2SC3645	KEXIN	获取价格	High-Voltage Switching Applications
2SC3645	TYSEMI	获取价格	Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
2SC3645_15	KEXIN	获取价格	NPN Transistors
2SC3645-HF_15	KEXIN	获取价格	NPN Transistors
2SC3645R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 140MA I(C) \| SOT-89
2SC3645-R	KEXIN	获取价格	NPN Transistors