是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.36 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.03 A | 基于收集器的最大容量: | 1.35 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 70 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3547BTE85L | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal | |
2SC3547BTE85R | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal | |
2SC3548 | TOSHIBA |
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TRANSISTOR,BJT,NPN,15V V(BR)CEO,30MA I(C),MICRO-X | |
2SC3549 | FUJI |
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TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING | |
2SC3549 | SAVANTIC |
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Silicon NPN Power Transistors | |
2SC3549 | ISC |
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isc Silicon NPN Power Transistors | |
2SC3550 | ISC |
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Silicon NPN Power Transistor | |
2SC3550 | FUJI |
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Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
2SC3551 | ISC |
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Silicon NPN Power Transistors | |
2SC3551 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors |