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2SC3549 PDF预览

2SC3549

更新时间: 2024-11-05 05:56:43
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无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 226K
描述
isc Silicon NPN Power Transistors

2SC3549 数据手册

 浏览型号2SC3549的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
2SC3549  
DESCRIPTION  
·High Voltage  
·High Speed Switching  
·High Reliability  
APPLICATIONS  
·Switching regulators  
·DC-DC converter  
·Solids state relay  
·General purpose power amplifiers  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
900  
800  
10  
UNIT  
V
V
V
Collector Current-Continuous  
Base Current-Continuous  
3
A
IB  
1
A
Collector Power Dissipation  
@ TC=25℃  
PC  
40  
W
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
4.16  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 12A I(C) | TO-218VAR