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2SC3551 PDF预览

2SC3551

更新时间: 2024-11-18 04:25:59
品牌 Logo 应用领域
富士电机 - FUJI 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
2页 236K
描述
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING

2SC3551 技术参数

生命周期:Obsolete零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N其他特性:HIGH RELIABILITY
最大集电极电流 (IC):5 A集电极-发射极最大电压:800 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:80 W
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):4800 ns最大开启时间(吨):1000 ns
Base Number Matches:1

2SC3551 数据手册

 浏览型号2SC3551的Datasheet PDF文件第2页 
FUJI POWER TRANSISTOR  
2SC3551  
TRIPLE DIFFUSED PLANER TYPE  
HIGH VOLTAGE,HIGH SPEED SWITCHING  
Outline Drawings  
TO-3P  
Features  
High voltage,High speed switching  
High reliability  
Applications  
Switching regulators  
Ultrasonic generators  
High frequency inverters  
General purpose power amplifiers  
JEDEC  
EIAJ  
-
SC-65  
Maximum ratings and characteristics  
Absolute maximum ratings (Tc=25°C unless otherwise specified)  
Item  
Symbol  
Ratings  
900  
Unit  
V
Collector-Base voltage  
Collector-Emitter voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector current  
VCBO  
VCEO  
V
800  
-
V
VCEO(SUS)  
V
VEBO  
IC  
10  
5
A
A
Base current  
IB  
3
W
°C  
°C  
Collector power disspation  
Operating junction temperature  
Storage temperature  
PC  
Tj  
80  
+150  
-55 to +150  
Tstg  
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
VCBO  
VCEO  
VCEO(SUS)  
VEBO  
ICBO  
Item  
Test Conditions  
ICBO = 1mA  
V
V
V
V
Collector-Base voltage  
Collector-Emitter voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector-Base leakage current  
Emitter-Base leakage current  
D.C. current gain  
900  
800  
-
ICEO = 10mA  
-
-
-
-
IEBO = 1mA  
10  
1.0  
1.0  
mA  
mA  
VCBO = 900V  
VEBO = 10V  
IEBO  
hFE  
10  
IC = 2A, VCE = 5V  
IC = 2A, IB = 0.4A  
VCE(Sat)  
VBE(Sat)  
ton  
1.0  
1.5  
1.0  
4.0  
0.8  
V
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
*1  
V
µs  
µs  
µs  
IC = 3A, IB1 = 0.6A  
tstg  
Switching time  
IB2 = -1.2A, RL = 100 ohm  
tf  
µ
Pw = 20 s Duty=<2%  
Thermal characteristics  
Min.  
Typ.  
Max. Units  
Item  
Symbol  
Rth(j-c)  
Test Conditions  
Junction to case  
1.5  
°C/W  
Thermal resistance  
1

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