生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 800 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 80 W |
最大功率耗散 (Abs): | 80 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 4800 ns | 最大开启时间(吨): | 1000 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3552 | NJSEMI |
获取价格 |
SI NPN POWER BJT, I(C) = 10A TO 19.9A | |
2SC3552 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
2SC3552 | Wing Shing |
获取价格 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) | |
2SC3552 | SANYO |
获取价格 |
For Switching Regulators | |
2SC3552K | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 12A I(C) | TO-218VAR | |
2SC3552L | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 12A I(C) | TO-218VAR | |
2SC3552M | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 12A I(C) | TO-218VAR | |
2SC3553 | HITACHI |
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Silicon NPN Epitaxial | |
2SC3553B | ETC |
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TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | SPAKVAR | |
2SC3553-B | HITACHI |
获取价格 |
SMALL SIGNAL TRANSISTOR |