Datasheet > 2SC3551

2SC3551

更新时间： 2024-11-06 05:56:03

品牌	Logo	应用领域
SAVANTIC		晶体晶体管开关局域网
页数	文件大小	规格书
4页	236K
描述
Silicon NPN Power Transistors

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中文翻译

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2SC3551 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3551

DESCRIPTION

·With TO-3PN package

·High voltage ,high speed switching

·High reliability

APPLICATIONS

·Switching regulators

·Ultrasonic generators

·High frequency inverters

·General purpose power amplifiers

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

900

800

UNIT

Open base

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

T_j

150

-55~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction case

1.5

ꢀ/W

12 3 4

中文翻译

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与2SC3551相关器件

型号	品牌	获取价格	描述	数据表
2SC3552	NJSEMI	获取价格	SI NPN POWER BJT, I(C) = 10A TO 19.9A
2SC3552	ISC	获取价格	isc Silicon NPN Power Transistor
2SC3552	Wing Shing	获取价格	Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)
2SC3552	SANYO	获取价格	For Switching Regulators
2SC3552K	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 12A I(C) \| TO-218VAR
2SC3552L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 12A I(C) \| TO-218VAR
2SC3552M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 12A I(C) \| TO-218VAR
2SC3553	HITACHI	获取价格	Silicon NPN Epitaxial
2SC3553B	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 35V V(BR)CEO \| 500MA I(C) \| SPAKVAR
2SC3553-B	HITACHI	获取价格	SMALL SIGNAL TRANSISTOR