Datasheet > 2SC3552

2SC3552

更新时间： 2024-11-17 22:39:59

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	84K
描述
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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2SC3552 数据手册

Silicon Epitaxial Planar Transistor

2SC3552

GENERAL DESCRIPTION

Silicon NPN high frequency, high power transistors

in a plastic envelope, primarily for use in audio and

general purpose

MT-100

QUICK REFERENCE DATA

SYMBOL

V_CESM

V_CEO

I_C

I_CM

P_tot

V_CEsat

V_F

t_f

PARAMETER

CONDITIONS

TYP

MAX

1100

500

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Diode forward voltage

T_mb25

150

I_C= 4.5A; I_B= 1.0A

I_F= 4.5A

1.5

2.0

1.0-

Fall time

I_C=4.5A,I_B1=-I_B2=0.8A,V_CC=80V

0.3

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

V_EBO

I_C

I_B

P_tot

T_stg

T_j

PARAMETER

CONDITIONS

MIN

MAX

1100

500

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Emitter-base oltage (open colloctor)

Collector current (DC)

V_BE= 0V

Base current (DC)

Total power dissipation

Storage temperature

Tmb 25

150

-55

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

0.2

UNIT

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter breakdown voltage

Collector-emitter saturation voltages

DC current gain

V_CB=1000V

I_CBO

I_EBO

V_(BR)CEO

V_CEsat

h_FE

f_T

C_c

t_on

t_s

t_f

V_EB=5V

0.2

I_C=1mA

500

I_C= 4.5A; I_B= 1A

I_C= 1.0A; V_CE= 5V

I_C= 1.0A; V_CE= 12V

V_CB= 10V

3.0

280

Transition frequency at f = 5MHz

Collector capacitance at f = 1MHz

On times

MHz

I_C=4.5A,I_B1=-I_B2=0.8A,V_CC=80V

Tum-off storage time

Fall time

0.3

1.0

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

中文翻译

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与2SC3552相关器件

型号	品牌	获取价格	描述	数据表
2SC3552K	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 12A I(C) \| TO-218VAR
2SC3552L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 12A I(C) \| TO-218VAR
2SC3552M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 12A I(C) \| TO-218VAR
2SC3553	HITACHI	获取价格	Silicon NPN Epitaxial
2SC3553B	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 35V V(BR)CEO \| 500MA I(C) \| SPAKVAR
2SC3553-B	HITACHI	获取价格	SMALL SIGNAL TRANSISTOR
2SC3553BRF	RENESAS	获取价格	500mA, 35V, NPN, Si, SMALL SIGNAL TRANSISTOR, SPAK-3
2SC3553BRR	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
2SC3553BTZ	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
2SC3553C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 35V V(BR)CEO \| 500MA I(C) \| SPAKVAR