Datasheet > 2SC3547B

2SC3547B

更新时间： 2024-11-05 06:16:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	35K
描述
Silicon NPN Epitaxial Planar Type

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中文翻译

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数据手册

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2SC3547B 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial Planar Type

2SC3547B

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Transition frequency is high and dependent on current excellently.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^B

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Base current

Collector current

I^C

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

VCB =10 V, IE = 0

VEB = 1 V, IC = 0

I^EBO

1.0

V^{(BR) CEO}IC = 1 mA, IB = 0

h^FEVCE = 10 V, IC = 5 mA

f^T

300

Transition frequency

VCE = 10 V, IC= 10 mA

1.05 1.35

4.5

GHz

Output capacitance

C^ob

VCB = 10 V, IE =0, f =1 MHz

Collector-base time constant

C^c.rbb' VCB = 10 V, IC = 5 mA, f = 30 MHz

Marking

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