2SC3545P

更新时间： 2024-11-22 23:20:15

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	99K
描述
TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 50MA I(C) \| SOT-346

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中文翻译

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2SC3545P 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3545

UHF OSCILLATOR AND MIXER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

DESCRIPTION

The 2SC3545 is an NPN silicon epitaxial transistor intended for use as

UHF oscillator and mixer in a tuner of a TV receiver.

PACKAGE DIMENSIONS

(Units: mm)

The device features stable oscillation and small frequency drift against

any change of the supply voltage and the ambient temperature.

It is designed for use in small type equipments especially

recommended for Hybrid Integrated Circuit and other applications.

2.8±0.2

1.5

+0.1

−0.15

0.65

FEATURES

•

High Gain Bandwidth Procuct; f^T= 2 000 MHz TYP.

r^b’b= 4 ps TYP.

Low Collector to Base Time Constant; C^C

Low Feedback Capacitance; C^re= 0.48 pF TYP.

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Marking

Maximum Voltages and Current

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

3.0

PIN CONNECTIONS

Maximum Power Dissipation

Total Power Dissipation

Maximum Temperature

Junction Temperature

Storage Temperature

1. Emitter

2. Base

3. Collector

P^T

150

T^j

125

T^stg

65 to +125

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

DC Current Gain

SYMBOL

MIN.

TYP.

100

MAX.

0.1

UNIT

TEST CONDITIONS

I^CBO

V^CB= 12 V, I^E= 0

h^FE

250

0.5

V^CE= 10 V, I^C= 5.0 mA

I^C= 10 mA, I^B= 1.0 mA

V^CE= 10 V, I^E= 5.0 mA

Collector Saturation Voltage

Gain Bandwidth Product

Output Capacitance

V^CE(sat)

f^T

MHz

1.3

2.0

0.48

C^ob

1.0

V^CB= 10 V, I^E= 0, f = 1.0 MHz

V^CE= 10 V, I^E= 5.0 mA, f = 31.9 MHz

r^b’b

Collector to Base Time Constant

C^C

h^FEClassification

Class

Marking

h^FE

M/P *

T42

L/Q *

T43

K/R *

T44

50 to 100

70 to 140

120 to 250

* Old Specification / New Specification

Document No. P10358EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1984

12 3 4 5 6 7 8

中文翻译

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与2SC3545P相关器件

型号	品牌	获取价格	描述	数据表
2SC3545-P	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3545-P-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3545Q	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 50MA I(C) \| SOT-346
2SC3545-Q	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3545R	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 50MA I(C) \| SOT-346
2SC3545-R	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3545-T1B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3545-T1BT43	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3545-T2B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3545-T2BT43	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili

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