Datasheet > 2SC3547B

2SC3547B

更新时间： 2024-11-21 12:53:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	87K
描述
Transition frequency is high and dependent on current excellently.

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数据手册

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2SC3547B 数据手册

SSSMMMDDD TTTyyypppeee

TTrraannssiissttIIooCCrrss

Product specification

2SC3547B

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Transition frequency is high and dependent on current excellently.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^B

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Base current

Collector current

I^C

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

125

T^stg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

Unit

ìA

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

V^CB=10 V, I^E= 0

V^EB= 1 V, I^C= 0

0.1

1.0

I^EBO

V^{(BR) CEO}I^C= 1 mA, I^B= 0

h^FEVCE = 10 V, IC = 5 mA

f^T

300

Transition frequency

V^CE= 10 V, I^C= 10 mA

1.05 1.35

4.5

GHz

Output capacitance

C^ob

V^CB= 10 V, I^E=0, f =1 MHz

Collector-base time constant

C^c.rbb' V^CB= 10 V, I^C= 5 mA, f = 30 MHz

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

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