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2SB1664

更新时间： 2024-11-13 04:25:55
品牌 Logo 应用领域
三洋 - SANYO 晶体驱动器晶体管达林顿晶体管
页数 文件大小 规格书
4页 39K
描述
PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications

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中文翻译

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2SB1664 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-F2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
最大集电极电流 (IC)：0.008 A集电极-发射极最大电压：100 V
配置：DARLINGTON WITH BUILT-IN DIODE最小直流电流增益 (hFE)：1500
JESD-30 代码：R-PSSO-F2元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP最大功率耗散 (Abs)：35 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：20 MHz
Base Number Matches：1

2SB1664 数据手册

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Ordering number : EN8528  
SANYO Sem iconductors  
DATA S HEET  
PNP Epitaxial Planar Silicon Darlington Transistor  
2SB1664  
Driver Applications  
Applications  
•
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.  
Features  
•
•
•
High DC current gain.  
Large current capacity and wide ASO.  
Low saturation voltage.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
-- 11 0  
--100  
-- 6  
V
V
I
-- 8  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
--12  
35  
A
CP  
P
Tc=25°C  
W
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=--80V, I =0A  
Unit  
min  
max  
--0.1  
--3.0  
I
V
V
V
V
mA  
mA  
CBO  
CB  
EB  
CE  
CE  
E
Emitter Cutoff Current  
I
=--5V, I =0A  
C
EBO  
DC Current Gain  
h
FE  
=--3V, I =--4A  
1500  
4000  
20  
C
Gain-Bandwidth Product  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Turn-ON Time  
f
T
=--5V, I =--4A  
MHz  
V
C
V
CE  
V
BE  
(sat)  
I
C
I
C
I
C
I
C
=--4A, I =--8mA  
--1.0  
--1.5  
--2.0  
B
(sat)  
=--4A, I =--8mA  
V
B
V
V
=--5mA, I =0A  
--110  
--100  
V
(BR)CBO  
(BR)CEO  
E
=--50mA, R =∞  
BE  
V
t
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
0.7  
1.4  
1.5  
µs  
µs  
µs  
on  
Storage Time  
t
stg  
Fall Time  
t
f
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
73106IA MS IM TA-1083  
No.8528-1/4  
1234

中文翻译

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