生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.008 A | 集电极-发射极最大电压: | 100 V |
配置: | DARLINGTON WITH BUILT-IN DIODE | 最小直流电流增益 (hFE): | 1500 |
JESD-30 代码: | R-PSSO-F2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 35 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 20 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1667 | TYSEMI |
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Low collector saturation voltage. Collector-base voltage VCBO -60 V | |
2SB1667 | TOSHIBA |
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TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) | |
2SB1667 | KEXIN |
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Silicon PNP Triple Diffused Type | |
2SB1667(SM) | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-263AB | |
2SB1667(SM)-GR | TOSHIBA |
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TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Pur | |
2SB1667(SM)-O | TOSHIBA |
获取价格 |
TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Pur | |
2SB1667(SM)-Y | TOSHIBA |
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TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Pur | |
2SB1667_06 | TOSHIBA |
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Silicon PNP Triple Diffused Type | |
2SB1667_09 | TOSHIBA |
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Audio Frequency Power Amplifier Applications | |
2SB1667_15 | KEXIN |
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PNP Transistors |