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2SB1667(SM)-GR

更新时间： 2024-09-25 13:04:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	162K
描述
TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Purpose Power

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技术参数
数据手册

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2SB1667(SM)-GR 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	LEAD FREE, 2-10S2, 3 PIN	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.38
Is Samacsys：	N	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	3 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	150
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	9 MHz	Base Number Matches：	1

2SB1667(SM)-GR 数据手册

2SB1667(SM)

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SB1667(SM)

Audio Frequency Power Amplifier Applications

Unit: mm

•

Low saturation voltage: V

= −1.7 V (max)

CE (sat)

(I = −3 A, I = −0.3 A)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−60

Collector-emitter voltage

Emitter-base voltage

Collector current

−7

−3

Base current

−0.5

1.5

Ta = 25°C

Tc = 25°C

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-10S2A

Weight: 1.4 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-21

12 3 4 5

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