2SB1672F

更新时间： 2024-11-13 13:04:11

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
1页	54K
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中文翻译

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数据手册

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2SB1672F 数据手册

2SB1672

Transistors

Power Transistor (−80V, −7A)

2SB1672

!External dimensions (Units : mm)

!Features

1) Low saturation voltage.

CE(sat)

(Typ. V

= −0.3V at I / I =−4A / −0.4A)

10.0

4.5

2.8

3.2

2) Excellent DC current gain characteristics.

3) Pc = 30W (Tc = 25°C).

4) Wide SOA (safe operating area).

5) Complements the 2SD2611.

1.2

1.3

0.8

0.75

2.54

2.6

(

) (

)

(

)

(

)

(1) Base Gate

( ) ( )

( )

1 2

(

)

(2) Collector Drain

(3) Emitter Source

(

ROHM : TO-220FN

!Absolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−80

−5

Unit

VCBO

VCEO

VEBO

A(DC)

A(Pulse)

−7

Collector current

−10

Collector power dissipation

W(Tc=25°C)

°C

150

Junction temperature

Storage temperature

Tstg

−55 ∼ +150

°C

Single pulse, Pw=100ms

!Packaging specifications and h^FE

Type

2SB1672

Package

TO-220FN

hFE

Code

−

500

Basic ordering unit (pieces)

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−80

−5

−

100

−

200

−

−10

−1

−1.5

320

−

−50µA

−1mA

−50µA

CBO

µA

−80V

−4V

Emitter cutoff current

EBO

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

CE(sat)

C/I

−4A/−0.4A

∗

BE(sat)

C/I

hFE

−

MHz

CE/IC = −5V/−1A

Transition frequency

−5V , I

0.5A , f = 5MHz

Output capacitance

Cob

−

−10V , I

0A , f = 1MHz

Measured using pulse current

∗

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