Datasheet > 2SB1683E

2SB1683E

更新时间： 2024-11-12 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管局域网
页数	文件大小	规格书
4页	34K
描述
TRANSISTOR \| BJT \| PNP \| 140V V(BR)CEO \| 12A I(C) \| TO-220AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1683E 数据手册

Ordering number : ENN6960

2SB1683 / 2SD2639

2SB1683 : PNP Epitaxial Planar Silicon Transistor

2SD2639 : NPN Triple Diffused Planar Silicon Transistor

2SB1683 / 2SD2639

140V / 12A, AF 60W Output Applications

Features

Package Dimensions

• Wide ASO because of on-chip ballast resistance.

unit : mm

• Good dependence of f on current and good HF

2010C

characteristic.

[2SB1683 / 2SD2639]

10.2

4.5

3.6

5.1

1.3

1.2

0.8

0.4

1 : Base

2 : Collector

3 : Emitter

Specifications

( ) : 2SB1683

2.55

SANYO : TO-220

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

(--)160

(--)140

(--)6

(--)12

Collector Current (Pulse)

Collector Dissipation

(--)15

Tc=25°C

°C

Junction Temperature

Storage Temperature

Tstg

150

--40 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=(--)80V, I =0

Unit

min

max

Collector Cutoff Current

Emitter Cutoff Current

(--)0.1

CBO

=(--)4V, I =0

EBO

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62501 TS IM TA-3139, 3140 No.6960-1/4

12 3 4

中文翻译

下载PDF

与2SB1683E相关器件

型号	品牌	获取价格	描述	数据表
2SB1685	ETC	获取价格	Power Transistor For Power Amplifier
2SB1685O	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1685P	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1685Y	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1686	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
2SB1686O	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
2SB1686P	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
2SB1686Y	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
2SB1686Y	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
2SB1687	ALLEGRO	获取价格	Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,

与2SB1683E相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

25
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1683E

2SB1683E 数据手册

与2SB1683E相关器件

与2SB1683E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SB1683E

2SB1683E 数据手册

与2SB1683E相关器件

与2SB1683E相关文章

您还可以找

您在本页遇到什么问题？