是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
其他特性: | BUILT IN RESISTOR | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 110 V |
配置: | DARLINGTON WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 6500 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 30 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1686Y | ALLEGRO |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
2SB1686Y | SANKEN |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
2SB1687 | ALLEGRO |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1687 | SANKEN |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1687O | ALLEGRO |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1687P | SANKEN |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1687Y | SANKEN |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1687Y | ALLEGRO |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1688 | HITACHI |
获取价格 |
Silicon PNP Epitaxial High voltage amplifier | |
2SB1688 | RENESAS |
获取价格 |
Silicon PNP Epitaxial High voltage amplifier |