生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 110 V |
配置: | DARLINGTON WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 6500 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1687Y | SANKEN |
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Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1687Y | ALLEGRO |
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Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1688 | HITACHI |
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Silicon PNP Epitaxial High voltage amplifier | |
2SB1688 | RENESAS |
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Silicon PNP Epitaxial High voltage amplifier | |
2SB1688TZ-E | RENESAS |
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Silicon PNP Epitaxial High voltage amplifier | |
2SB1689 | ROHM |
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General purpose amplification (-12V, -1.5A) | |
2SB1689_13 | ROHM |
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PNP -1.5A -12V Low Frequency Amplifier Transistors | |
2SB1689T106 | ROHM |
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PNP -1.5A -12V Low Frequency Amplifier Transistors | |
2SB1690 | ROHM |
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General purpose amplification(−12V, −2A) | |
2SB1690_05 | ROHM |
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General purpose amplification(â12V, â2A) |