Datasheet > 2SB1679R

2SB1679R

更新时间： 2024-11-10 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	57K
描述
TRANSISTOR \| BJT \| PNP \| 10V V(BR)CEO \| 1A I(C) \| SC-70

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中文翻译

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2SB1679R 数据手册

Transistors

2SB1679

Silicon PNP epitaxial planer type

Unit: mm

For low-frequency amplification

+±.1±

+±.1

–±.±

±.15

±.3

–±.±5

I Features

• Large current capacitance

• Low collector to emitter saturation voltage

Small type package, allowing downsizing and thinning of the

•

(±.65) (±.65)

equipment.

1.3±±.1

2.±±±.2

1±°

I Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

−15

Unit

1: Base

2: Emitter

3: Collector

−10

−7

EIAJ: SC-70

− 0.5

−1

S-Mini Type Package (3-pin)

I_C

Marking Symbol: 3V

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CB= −10 V, I_E= 0

−100

V_CBO

V_CEO

V_EBO

I_C= −10 µA, I_E= 0

−15

−10

−7

I_C= −1 mA, I_B= 0

I_E= −10 µA, I_C= 0

Forward current transfer ratio ^*

h_FE1

h_FE2

V_CE= −2 V, I_C= − 0.5 A

V_CE= −2 V, I_C= −1 A

I_C= − 0.4 A, I_B= −8 mA

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

130

350

Collector to emitter saturation voltage ^*

Base to emitter saturation voltage ^*

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

− 0.16 − 0.3

− 0.8

130

−1.2

MHz

Collector output capacitance

C_ob

Note) 1: Pulse measurement

2: Rank classification

Rank

h_FE1

130 to 220

180 to 350

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