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2SB1676 PDF预览

2SB1676

更新时间: 2024-11-10 23:20:07
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描述

2SB1676 数据手册

  
2SB1676  
Transistors  
Medium Power Transistor  
(Motor, Relay drive) (80V, 4A)  
2SB1676  
!External dimensions (Units : mm)  
!Features  
FE  
1) Darlington connection for a high h .  
2) Built-in resistor between base and emitter.  
3) Built-in damper diode.  
10.0  
4.5  
2.8  
3.2  
φ
4) Complements the 2SD2618.  
1.2  
1.3  
0.8  
!Absolute maximum ratings (Ta = 25°C)  
0.75  
( )  
(1) Base Gate  
2.54  
2.54  
)
2.6  
(
) (  
) (  
)
1
2
(
(
3
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
80  
80  
7  
Unit  
(
)
)
(2) Collector Drain  
(
)
)
(
1
2
3
(3) Emitter Source  
VCBO  
VCEO  
VEBO  
V
V
ROHM : TO-220FN  
V
I
C
4  
6  
A
A(Pulse)  
W(Ta = 25°C)  
W(Tc = 25°C)  
°C  
Collector current  
I
CP  
*
2
Collector power dissipation  
P
C
30  
Junction temperature  
Storage temperature  
Tj  
150  
55~+150  
Tstg  
°C  
Single pulse, Pw = 100ms  
*
!Packaging specifications and hFE  
Type  
2SB1676  
TO-220FN  
1k~10k  
-
Package  
hFE  
Code  
Basic ordering unit (pieces)  
500  
!Circuit diagram  
C
B
R
300Ω  
B : Base  
C : Collector  
E : Emitter  
R
E
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
BVCEO  
Min.  
Typ.  
-
Max.  
-
Unit  
V
Conditions  
Collector-emitter breakdown voltage  
80  
I
C
= 1mA  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVEBO  
80  
7  
-
-
-
-
-
V
V
I
I
C
= 50µA  
= 50µA  
CB = 80V  
EB = 5V  
E
I
CBO  
EBO  
CE(sat)  
FE  
-
10  
10  
1.5  
10000  
-
µA  
µA  
V
V
V
Emitter cutoff current  
I
-
-
Collector-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
V
-
-
I
C
/I  
CE/I  
CE = 5V , I  
CB = 10V , IE  
B
= 2A/4mA  
= 3V/2A  
= 0.5A , f = 10MHz  
= 0A , f = 1MHz  
1
*
*
*
h
1000  
-
-
V
V
V
C
1
2
f
T
-
-
20  
22  
MHz  
pF  
E
Output capacitance  
Cob  
-
1 Measured using pulse current.  
*
2 Transition frequency of the device.  
*

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