Datasheet > 2SB1678R

2SB1678R

更新时间： 2024-09-24 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	61K
描述
TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 3A I(C) \| SOT-89

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中文翻译

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数据手册

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2SB1678R 数据手册

Transistors

2SB1678

Silicon PNP epitaxial planer type

Unit: mm

For low-frequency amplification

4.5±±.ꢀ

ꢀ.6±±.2

ꢀ.5±±.ꢀ

I Features

• Low collector to emitter saturation voltage V_CE(sat)

• Large Peak collector current I_CP

ꢀ

Mini power type package, allowing downsizing and thinning of the

•

±.4±±.±0

ꢀ.5±±.ꢀ

±.5±±.±0

±.4±±.±4

equipment and automatic insertion through the tape packing

3˚

I Absolute Maximum Ratings T_a= 25°C

45˚

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

3.±±±.ꢀ5

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

−30

−20

1: Emitter

2: Collector

3: Base

−7

−5

MiniP3 Type Package

I_C

−3

Marking Symbol: 2K

Collector power dissipation ^*

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

Note) : Printed circuit board copper foil for collector portion

area: 1.0 Cm²or more, thickness: 1.7 mm

Absolute maximum rating P_CWithout heat sink shall be 0.5 W

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I_CBO

I_EBO

Conditions

V_CB= −10 V, I_E= 0

Min

Typ

Max

−100

Unit

V_EB= −5 V, I_C= 0

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio ^*

V_CEO

V_EBO

h_FE

I_C= −1 mA, I_B= 0

−20

−7

I_E= −10 µA, I_C= 0

1, 2

V_CE= −2 V, I_C= 200 mA

I_C= −3 A, I_B= − 0.1 A

V_CB= −20 V, I_E= 0, f = 1 MHz

V_CB= −6 V, I_E= 50 mA, f = 200 MHz

625

−1

Collector to emitter saturation voltage ^*

Collector output capacitance

Transition frequency

V_CE(sat)

C_ob

f_T

120

MHz

Note) 1: Pulse measurement

2: Rank classification

Rank

h_FE

90 to 135

120 to 205

180 to 625

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