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2SB1667(SM)-O PDF预览

2SB1667(SM)-O

更新时间: 2024-11-13 13:04:11
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 162K
描述
TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10S2, 3 PIN, BIP General Purpose Power

2SB1667(SM)-O 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:LEAD FREE, 2-10S2, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.38Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:25 W认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):9 MHzVCEsat-Max:1.7 V
Base Number Matches:1

2SB1667(SM)-O 数据手册

 浏览型号2SB1667(SM)-O的Datasheet PDF文件第2页浏览型号2SB1667(SM)-O的Datasheet PDF文件第3页浏览型号2SB1667(SM)-O的Datasheet PDF文件第4页浏览型号2SB1667(SM)-O的Datasheet PDF文件第5页 
2SB1667(SM)  
TOSHIBA Transistor Silicon PNP Triple Diffused Type  
2SB1667(SM)  
Audio Frequency Power Amplifier Applications  
Unit: mm  
Low saturation voltage: V  
= 1.7 V (max)  
CE (sat)  
(I = 3 A, I = 0.3 A)  
C
B
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
60  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
7  
I
3  
C
Base current  
I
0.5  
1.5  
B
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
25  
Junction temperature  
T
150  
°C  
°C  
j
JEDEC  
JEITA  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
2-10S2A  
Weight: 1.4 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-21  

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