Datasheet > 2SB1667-O

2SB1667-O

更新时间： 2024-11-14 01:09:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1356K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1667-O 数据手册

SMD Type

Transistors

PNP Transistors

2SB1667

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

-0.2

5.30

0.50

■ Features

● Low saturation voltage

● Audio Frequency Power Amplifier Applications

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base current

Symbol

Rating

-60

-7

Unit

VCBO

VCEO

VEBO

-3

-0.5

Collector Power Dissipation

Tc = 25°C

Ta = 25°C

℃

1.5

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -5 mA， I =0

= -100μA， I

Min

-60

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

CB= -60 V , I

^EB= -7V , I

-100

-1.7

-1.2

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-3 A, I

=-300mA

-0.5

-0.7

C=-3 A, I

CE= -5V, I

CE=- 5V, I

C= -500mA

C= -3 A

FE(1)

FE(2)

300

DC current gain

Turn-on time

0.4

1.7

0.5

150

See specified Test Circuit

Storage time

stg

Fall time

Collector output capacitance

Transition frequency

CB= -10V, I

E= 0,f=1MHz

CE= -5V, I = -500mA

MHz

■ Classification of hfe(1)

Type

2SB1667-O

60-120

2SB1667-Y 2SB1667-GR

100-200 150-300

Range

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与2SB1667-O相关器件

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2SB1667O(SM)	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-252AA
2SB1667SM	TOSHIBA	获取价格	Audio Frequency Power Amplifier Applications
2SB1667-Y	KEXIN	获取价格	PNP Transistors
2SB1667Y(SM)	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-252AA
2SB1668	ROHM	获取价格	For Power amplification (-100V, -8A)
2SB1669	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SB1669-S	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
2SB1669-Z	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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2SB1672F	ROHM	获取价格	暂无描述