Datasheet > 2SB1667_06

2SB1667_06

更新时间： 2024-11-11 04:25:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	162K
描述
Silicon PNP Triple Diffused Type

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数据手册

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2SB1667_06 数据手册

2SB1667(SM)

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SB1667(SM)

Audio Frequency Power Amplifier Applications

Unit: mm

•

Low saturation voltage: V

= −1.7 V (max)

CE (sat)

(I = −3 A, I = −0.3 A)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−60

Collector-emitter voltage

Emitter-base voltage

Collector current

−7

−3

Base current

−0.5

1.5

Ta = 25°C

Tc = 25°C

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-10S2A

Weight: 1.4 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-21

12 3 4 5

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