生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.61 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1260-Q-AB3-B | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260-Q-AB3-F-R | UTC |
获取价格 |
Transistor | |
2SB1260-Q-AB3-K | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260-Q-AB3-R | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260Q-G | UTC |
获取价格 |
Transistor | |
2SB1260Q-G | WEITRON |
获取价格 |
Transistor | |
2SB1260QT100 | ROHM |
获取价格 |
Transistor | |
2SB1260-Q-TN3-B | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260-Q-TN3-F-R | UTC |
获取价格 |
Transistor | |
2SB1260-Q-TN3-K | UTC |
获取价格 |
POWER TRANSISTOR |