Datasheet > 2SB1260Q-G

2SB1260Q-G

更新时间： 2024-09-16 20:00:35

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
5页	118K
描述
Transistor

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技术参数
数据手册

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2SB1260Q-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SB1260Q-G 数据手册

2SB1260

PNP Plastic-Encapsulate Transistor

SOT-89

* “G” Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

(Ta=25 C)

ABSOLUTE MAXIMUM RATINGS

Rating

Unit

Symbol

Value

-80

-5.0

Vdc

Collector-Emitter Voltage

VCEO

Vdc

Collector-Base Voltage

Emitter-Base Voltage

VCBO

VEBO

Adc(DC)

1.0

2.0

0.5

Collector Current

Adc (Pulse)

Collector Power Dissipation

Junction Temperature, Storage Temperature

, Tstg

-55 to +150

150,

Device Marking

2SB1260=ZL

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = -1.0 mAdc, I =0)

-80

Vdc

(BR)CEO

-80

Vdc

Collector-Base Breakdown Voltage (I = -50 µAdc, I =0)

(BR)CBO

-5.0

Emitter-Base Breakdown Voltage (I = -50 µAdc, I =0)

(BR)EBO

Collector Cutoff Current (V = -60 Vdc, I =0)

uAdc

CBO

-1

Emitter Cutoff Current (V =-4.0 Vdc, I =0)

EBO

1.FR-5=1.0 x 0.75 x 0.062 in.

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