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2SB1260Q-G PDF预览

2SB1260Q-G

更新时间: 2024-11-18 13:04:11
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友顺 - UTC 晶体晶体管
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描述
Transistor

2SB1260Q-G 数据手册

  
Transys  
Electronics  
L
I M I T E D  
SOT-89 Plastic-Encapsulated Transistors  
2SB1260  
TRANSISTOR (PNP)  
SOT-89  
FEATURES  
1. BASE  
Power dissipation  
PCM:  
Collector current  
ICM:  
0.5  
-1  
W (Tamb=25)  
2. COLLECTOR  
3. EMITTER  
1
2
A
V
3
Collector-base voltage  
V(BR)CBO  
:
-80  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-50µA , IE=0  
MIN  
-80  
-80  
-5  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -1mA , IB=0  
IE=-50µA, IC=0  
V
V
VCB=-60 V , IE=0  
VEB=-4 V , IC=0  
-1  
-1  
µA  
µA  
IEBO  
Emitter cut-off current  
hFE  
DC current gain  
V
CE=-3V, IC= -0.1A  
82  
80  
390  
-0.4  
VCE(sat)  
IC=-500 mA, IB= -50mA  
VCE= -5V, IC=- 50mA  
V
Collector-emitter saturation voltage  
MHz  
Transition frequency  
f T  
f = 30MHz  
CLASSIFICATION OF hFE  
Rank  
P
Q
R
Range  
82-180  
120-270  
180-390  
Marking  
ZL  

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