是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 最大集电极电流 (IC): | 1 A |
配置: | Single | 最小直流电流增益 (hFE): | 82 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 1.9 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1260-Q-TN3-K | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260-Q-TN3-R | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260-Q-TN3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
2SB1260-Q-TP | MCC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP | |
2SB1260-Q-TP-HF | MCC |
获取价格 |
Small Signal Bipolar Transistor, | |
2SB1260R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1260-R | MCC |
获取价格 |
PNP Plastic-Encapsulate Transistors | |
2SB1260-R-AB3-B | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260-R-AB3-F-R | UTC |
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Transistor | |
2SB1260-R-AB3-K | UTC |
获取价格 |
POWER TRANSISTOR |