Datasheet > 晶体管 > 功率双极晶体管> 2SB1260-Q-TN3-T

2SB1260-Q-TN3-T

更新时间： 2024-11-18 13:04:11

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管
页数	文件大小	规格书
1页	67K
描述
Power Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SB1260-Q-TN3-T 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.77	Is Samacsys：	N
Base Number Matches：	1

2SB1260-Q-TN3-T 数据手册

Transys

Electronics

I M I T E D

SOT-89 Plastic-Encapsulated Transistors

2SB1260

TRANSISTOR (PNP)

SOT-89

FEATURES

1. BASE

Power dissipation

P_CM:

Collector current

I_CM:

0.5

-1

W (Tamb=25℃)

2. COLLECTOR

3. EMITTER

Collector-base voltage

V_(BR)CBO

-80

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-50µA , I_E=0

MIN

-80

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -1mA , I_B=0

I_E=-50µA, I_C=0

V_CB=-60 V , I_E=0

V_EB=-4 V , I_C=0

-1

µA

I_EBO

Emitter cut-off current

h_FE

DC current gain

_CE=-3V, I_C= -0.1A

390

-0.4

V_CE(sat)

I_C=-500 mA, I_B= -50mA

V_CE= -5V, I_C=- 50mA

Collector-emitter saturation voltage

MHz

Transition frequency

f _T

f = 30MHz

CLASSIFICATION OF h^FE

Rank

Range

82-180

120-270

180-390

Marking

中文翻译

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