是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.32 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 82 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e2 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN COPPER |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1260T100/Q | ROHM |
获取价格 |
暂无描述 | |
2SB1260T100/QR | ROHM |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1260T100/R | ROHM |
获取价格 |
1A, 80V, PNP, Si, POWER TRANSISTOR | |
2SB1260T100Q | ROHM |
获取价格 |
Power Transistor (â80V, â1A) | |
2SB1260T100R | ROHM |
获取价格 |
Power Transistor (â80V, â1A) | |
2SB1260T101/PQ | ROHM |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1260T101/PR | ROHM |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1260T101/QR | ROHM |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1260T101P | ROHM |
获取价格 |
1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1260T101Q | ROHM |
获取价格 |
1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR |