Datasheet > 2SB1261I

2SB1261I

更新时间： 2024-11-19 17:01:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	374K
描述
60V,3A,Medium Power PNP Bipolar Transistor

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中文翻译

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数据手册

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2SB1261I 数据手册

PNP Silicon Epitaxial Planar Transistor

2SB1261I

Features



Epitaxial planar die construction

High h_FE

Low V_CE(sat)

Mechanic al Data



Case: TO-251

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

TO-251

Ordering Information

Part Number

Package

TO-251

Shipping Quantity

Marking Code

B1261

2SB1261I

80 pcs / Tube

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-60

-7

Unit

-3

I_CM

-5

Base Current

I_B

-0.5

Thermal Characteristics

Parameter

Power Dissipation (T_A= 25°C )

Power Dissipation (T_C= 25°C )

Junction Temperature

Symbol

Value

Unit

P_D

T_J

-55 ~ +150

°C

Storage Temperature Range

T_STG

°C

STM0752A: March 2023 [2.0]

www.gmesemi.com

12 3 4

中文翻译

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与2SB1261I相关器件

型号	品牌	获取价格	描述	数据表
2SB1261K	ETC	获取价格	BJT
2SB1261K-Z	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-252VAR
2SB1261K-Z-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),TO-252
2SB1261L	ETC	获取价格	BJT
2SB1261L	FOSHAN	获取价格	TO-126F
2SB1261L-Z	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-252VAR
2SB1261L-Z-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),TO-252
2SB1261L-Z-E1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),TO-252
2SB1261L-Z-E2-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),TO-252
2SB1261M	ETC	获取价格	BJT