2SB1261
Transistor(PNP)
1. BASE
TO-252-2L
1
2. COLLECTOR
3. EMITTER
Features
High hFE hFE=100 to 400
Low vCE(sat) vCE(sat) ≤0.3V
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
-60
Units
V
-60
V
-7
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-3
A
PD
2
W
℃
℃
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-60
-60
-7
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=-100µA, IE=0
V(BR)CEO IC =-1mA, IB=0
V
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
V
IE=-100µA, IC=0
VCB=-60V, IE=0
-10
-10
µA
µA
Emitter cut-off current
VEB=-7V, IC=0
VCE=-2V, IC=-200mA
VCE=-2V, IC=-600mA
VCE=-2V, IC=-2A
60
100
50
DC current gain
400
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=-1.5A, IB=-150mA
IC=-1.5A, IB=-150mA
VCE=-5V, IC=-1.5A
VCB=-10V, IE=0, f=1MHz
-0.3
-1.2
V
V
50
40
MHz
pF
Collector output capacitance
Turn on Time
Cob
ton
0.5
2.0
0.5
VCC=-10V, IC=-1A, IB1=-IB2=-0.1A,
Switching Time
tstg
µs
Storage Time
Fall Time
RL=10Ω
tf
CLASSIFICATION OF hFE(1)
Rank
M
L
K
Range
100-200
160-320
200-400
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Revision:20170701-P1
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