5秒后页面跳转
2SB1260-R-TP PDF预览

2SB1260-R-TP

更新时间: 2024-11-18 13:04:11
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 183K
描述
暂无描述

2SB1260-R-TP 数据手册

 浏览型号2SB1260-R-TP的Datasheet PDF文件第2页 
M C C  
2SB1260-P  
2SB1260-Q  
2SB1260-R  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
PNP  
·
·
Plastic-Encapsulate  
Moisure Sensitivity Level 1  
Power dissipation: PCM = 0.5W(Tamb=25?)  
Transistors  
Collector current: ICM = -1A  
Collector-base voltage: V(BR)CBO = -80V  
Operating and storage junction temperature range  
TJ, Tstg: -55? to + 150?  
SOT-89  
Electrical Characteristics @ 25R Unless Otherwise Specified  
A
K
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=-1mA, IB=0)  
Min  
-80  
Typ  
---  
Max  
Unit  
B
V
---  
V
(BR)CEO  
Collector-Base Breakdown Voltage  
V
-80  
---  
(BR)CBO  
V
V
---  
---  
---  
---  
---  
(IC=-50IA, IE=0)  
E
Emitter-Base Breakdown Voltage  
C
V
(BR)EBO  
-5.0  
---  
---  
(IE=-50IA, IC=0)  
Collector cut-off Current  
(VCB=-60V, IE=0)  
D
ICBO  
IEBO  
hFE  
-1.0  
-1.0  
390  
uA  
uA  
---  
G
H
Emitter cut-off Current  
(VEB=-4V, IC=0)  
DC current gain  
---  
J
F
82  
(VCE=-3V, IC=-0.1A)  
Collector-Emitter Saturation Voltage  
(IC=-0.5A, IB=-0.05A)  
Transition Frequency  
(VCE=-5.0Vdc, IC=-0.05Adc,F=30MHZ)  
VCE(sat)  
fT  
V
---  
---  
-0.4  
---  
---  
80  
MHZ  
B
C
E
1
2
3
1.Base  
2.Collector  
3.Emitter  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
P
Q
R
82-180  
120-270  
180-390  
ZL  
ꢈꢀꢇꢄꢁꢅꢀꢁꢅꢆ  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢇꢆ  
ꢇꢉꢊꢆ  
ꢈꢀꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢍꢎꢏꢐꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
ꢉꢆ  
ꢖꢆ  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢑꢎꢆ  
ꢍꢕꢏꢎꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢒꢍꢔꢕꢆ  
ꢎꢍꢑꢕꢆ  
4.25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢍꢕꢔꢐꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢎꢍꢔꢕꢆ  
ꢐꢍꢓꢎ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢌꢛꢜꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
 ꢆ  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

与2SB1260-R-TP相关器件

型号 品牌 获取价格 描述 数据表
2SB1260-R-TP-HF MCC

获取价格

暂无描述
2SB1260T100/PQ ROHM

获取价格

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1260T100/PR ROHM

获取价格

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1260T100/Q ROHM

获取价格

暂无描述
2SB1260T100/QR ROHM

获取价格

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1260T100/R ROHM

获取价格

1A, 80V, PNP, Si, POWER TRANSISTOR
2SB1260T100Q ROHM

获取价格

Power Transistor (−80V, −1A)
2SB1260T100R ROHM

获取价格

Power Transistor (−80V, −1A)
2SB1260T101/PQ ROHM

获取价格

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1260T101/PR ROHM

获取价格

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3