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2SB1260-Q-TP PDF预览

2SB1260-Q-TP

更新时间: 2024-11-06 13:04:11
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 183K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

2SB1260-Q-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

2SB1260-Q-TP 数据手册

 浏览型号2SB1260-Q-TP的Datasheet PDF文件第2页 
M C C  
2SB1260-P  
2SB1260-Q  
2SB1260-R  
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TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
PNP  
·
·
Plastic-Encapsulate  
Moisure Sensitivity Level 1  
Power dissipation: PCM = 0.5W(Tamb=25?)  
Transistors  
Collector current: ICM = -1A  
Collector-base voltage: V(BR)CBO = -80V  
Operating and storage junction temperature range  
TJ, Tstg: -55? to + 150?  
SOT-89  
Electrical Characteristics @ 25R Unless Otherwise Specified  
A
K
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=-1mA, IB=0)  
Min  
-80  
Typ  
---  
Max  
Unit  
B
V
---  
V
(BR)CEO  
Collector-Base Breakdown Voltage  
V
-80  
---  
(BR)CBO  
V
V
---  
---  
---  
---  
---  
(IC=-50IA, IE=0)  
E
Emitter-Base Breakdown Voltage  
C
V
(BR)EBO  
-5.0  
---  
---  
(IE=-50IA, IC=0)  
Collector cut-off Current  
(VCB=-60V, IE=0)  
D
ICBO  
IEBO  
hFE  
-1.0  
-1.0  
390  
uA  
uA  
---  
G
H
Emitter cut-off Current  
(VEB=-4V, IC=0)  
DC current gain  
---  
J
F
82  
(VCE=-3V, IC=-0.1A)  
Collector-Emitter Saturation Voltage  
(IC=-0.5A, IB=-0.05A)  
Transition Frequency  
(VCE=-5.0Vdc, IC=-0.05Adc,F=30MHZ)  
VCE(sat)  
fT  
V
---  
---  
-0.4  
---  
---  
80  
MHZ  
B
C
E
1
2
3
1.Base  
2.Collector  
3.Emitter  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
P
Q
R
82-180  
120-270  
180-390  
ZL  
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4.25  
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www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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