Datasheet > 2SB1187_2014

2SB1187_2014

更新时间： 2024-01-14 18:16:11

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	159K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1187_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1187

DESCRIPTION

·With TO-220Fa package

·Low saturation voltage

·Complement to type 2SD1761

·Excellent DC current gain characteristics

·Wide safe operating area

APPLICATIONS

·For low frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

-80

UNIT

Open base

-60

Open collector

-5

Collector current (DC)

Collector current-Peak

-3

I_CM

-6

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

Junction temperature

Storage temperature

150

-55~150

℃

T_j

T_stg

12 3

中文翻译

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