Datasheet > 2SB1188_09

2SB1188_09

更新时间： 2024-01-02 00:09:01

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	175K
描述
Medium power transistor (-32V, -2A)

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中文翻译

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数据手册

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2SB1188_09 数据手册

Medium power transistor (32V, 2A)

2SB1188 / 2SB1182 / 2SB1240

Features

Dimensions (Unit : mm)

1) Low V^CE(sat).

2SB1188

2SB1182

V^CE(sat)= 0.5V (Typ.)

(I^C/IB = 2A / 0.2A)

2) Complements the 2SD1766 / 2SD1758 / 2SD1862.

+0.2

2.3

6.5 0.2

+0.2

4.5

−

0.1

C0.5

−0.1

0.2

5.1

−0.1

1.5

0.5 0.1

1.6 0.1

−0.1

0.65 0.1

0.75

(1) (2) (3)

0.1

0.4

Structure

Epitaxial planar type

PNP silicon transistor

0.9

−0.05

0.55 0.1

1.0 0.2

0.5 0.1

3.0 0.2

0.4 0.1

1.5 0.1

0.4 0.1

1.5 0.1

2.3 0.2 2.3 0.2

(1) (2) (3)

(1) Base

ROHM : MPT3

EIAJ : SC-62

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

(2) Collector

(3) Emitter

Abbreviated symbol: BC

∗

2SB1240

2.5 0.2

6.8 0.2

0.65Max.

0.5 0.1

(1) (2)

2.54

(3)

2.54

1.05

0.45 0.1

(1) Emitter

(2) Collector

(3) Base

ROHM : ATV

Denotes hFE

∗

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−40

−32

−5

Unit

VCBO

VCEO

VEBO

−2

A(DC)

A (Pulse)

Collector current

−3

∗

0.5

2SB1188

)

∗

Collector power

W (Tc=25°C

2SB1182

2SB1240

dissipation

∗

Junction temperature

Storage temperature

1 Single pulse, Pw=100ms

150

°C

Tstg

−55 to 150

∗

2 When mounted on a 40

×40×

0.7 mm ceramic board.

3 Printed circuit board, 1.7mm thick, collector copper plating 100mm²or larger.

www.rohm.com

2009.12 - Rev.B

1/3

12 3 4

中文翻译

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