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2SB1188_10 PDF预览

2SB1188_10

更新时间: 2024-02-14 05:09:36
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 340K
描述
PNP Silicon Medium Power Transistor

2SB1188_10 数据手册

 浏览型号2SB1188_10的Datasheet PDF文件第2页 
2SB1188  
-2A, -40V  
PNP Silicon Medium Power Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-89  
DESCRIPTION  
The 2SB1188 is designed for medium poweramplifier applications.  
4
1
2
3
A
E
FEATURES  
C
Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)  
RoHS Compliant Product  
B
D
F
G
H
CLASSIFICATION OF hFE  
K
2SB1188-P  
82~180  
BCP  
2SB1188-Q  
120~270  
BCQ  
2SB1188-R  
180~390  
BCR  
Product-Rank  
J
L
Range  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.60  
4.25  
1.60  
2.60  
Min.  
Max.  
Marking  
A
B
C
D
4.40  
3.94  
1.40  
2.30  
G
H
J
0.40  
0.58  
1.50 TYP  
3.00 TYP  
K
0.32  
0.35  
0.52  
0.44  
E
F
1.50  
0.89  
1.70  
1.2  
L
PACKAGE INFORMATION  
Package  
MPQ  
1K  
LeaderSize  
7’ inch  
SOT-89  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Unit  
Parameter  
Symbol  
Ratings  
-40  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current -Continuous  
Collector Power Dissipation  
Junction & Storage Temperature  
VCBO  
VCEO  
VEBO  
IC  
V
V
-32  
-5  
V
-2  
A
PD  
0.5 (2.0*)  
150, -55~150  
W
°C  
TJ, TSTG  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
-40  
-32  
-5  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-
-
V
V
IC=-50µA , IE=0  
IC= -1mA, IB=0  
-
-
-
-
-
-1  
V
IE= -50µA, IC=0  
VCB= -20V, IE=0  
VEB= -4V, IC=0  
IC=--2A, IB= -200mA  
VCE= -3V, IC= -500mA  
-
μA  
μA  
mV  
Emitter cut-off current  
Collector-emitter saturation voltage  
DC current gain  
IEBO  
VCE(sat)  
hFE  
-
-
82  
-
-1  
-500  
-
150  
50  
-800  
390-  
-
Transition frequency  
f T  
-
MHz VCE= -5V, IC= -500mA, f=30MHz  
pF VCB= -10V, IE=0, f=1MHz  
Output Capacitance  
COB  
-
-
Pulse Test: Pulse Width 380µs, Duty Cycle2%  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
10-Dec-2010 Rev. D  
Page 1 of 2  

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