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2SB1188 PDF预览

2SB1188

更新时间: 2024-01-27 21:26:17
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 638K
描述
PNP Silicon Medium Power Transistor

2SB1188 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.61Base Number Matches:1

2SB1188 数据手册

 浏览型号2SB1188的Datasheet PDF文件第2页 
2SB1188  
PNP Silicon  
Elektronische Bauelemente  
Medium Power Transistor  
SOT-89  
Description  
The 2SB1188 is designed for medium power  
amplifier applications.  
1
2
3
1.BASE  
2.COLLECTOR  
3.EMITTER  
Features  
* Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)  
* RoHS Compliant Product  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
Min.  
3.00 REF.  
1.50 REF.  
Max.  
A
B
C
D
E
F
4.4  
4.6  
G
H
I
J
K
L
M
4.05  
1.50  
1.30  
2.40  
0.89  
4.25  
1.70  
1.50  
2.60  
1.20  
0.40  
1.40  
0.35  
0.52  
1.60  
0.41  
5q TYP.  
0.70 REF.  
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Junction Temperature  
Storage Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Tj  
Ratings  
+150  
-55~+150  
-40  
Unit  
ć
Tstg  
VCBO  
VCEO  
VEBO  
IC  
ć
V
-32  
-5  
-2  
V
V
A
Total Power Dissipation  
PD  
0.5 (2.0*)  
W
*When mounted on a 40x40x0.7mm ceramic board.  
Electrical Characteristics(Ta = 25к,unless otherwise noted)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Test Conditions  
BVCBO  
-40  
-32  
-5  
-
-
-
-
-
-
-
-
-
-
-
IC=-50uA , IE=0  
IC=-1mA, IB=0  
IE=-50uA ,IC=0  
VCB=-20V, IE=0  
VEB=-4V, IC=0  
BVCEO  
BVEBO  
ICBO  
IEBO  
*VCE(sat)  
*hFE  
V
V
uA  
uA  
mV  
-1  
-1  
-800  
390  
-
-500  
-
150  
IC=-2A, IB=-200mA  
VCE=-3V, IC=-500mA  
VCE=-5V, IC=-500mA, f=30MHz  
VCB=-10V, IE=0, f=1MHz  
82  
-
fT  
MHz  
pF  
Cob  
-
50  
-
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
Rank  
P
Q
R
Range  
82 ~ 180  
120 ~ 270  
180 ~ 390  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
04-Apr-2007 Rev. C  
Page 1 of 2  

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