Datasheet > 2SB1188

2SB1188

更新时间： 2024-09-21 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
3页	531K
描述
SOT-89 Plastic-Encapsulate Transistors

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2SB1188 数据手册

2SB1188

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP)

FEATURES

Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)

Complements the 2SD1766

SOT-89

Weight: 0.05 g

RoHS product for packing code suffix "G"

1. BASE

Halogen free product for packing code suffix "H"

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

2. COLLECTOR

3. EMITTER

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-40

-32

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

-2

Collector Power Dissipation

Junction Temperature

0.5 (2.0*)

150

P_C

T_J

℃

Storage Temperature

T_stg

-55-150

* ^{When mounted on a 40*40*1mm ceramic board.}

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN TYP MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-32

-5

I_C=-50μA , I_E=0

I_C= -1mA , I_B=0

I_E=-50μA, I_C=0

V_CB=-20 V , I_E=0

V_EB=-4 V , I_C=0

V_CE=-3V, I_C= -0.5A

I_C=-2A, I_B= -0.2A

-1

μA

Emitter cut-off current

I_EBO

-1

h_FE

DC current gain *

390

-0.8

Collector-emitter saturation voltage *

Transition frequency

V_CE(sat)

_CE=-5V, I_C=-0.5A ,f=30MHz

100

MHz

f_T

Output capacitance

V_CB=-10V, I_E=0 ,f=1MHz

C_ob

* Measured using pulse current.

CLASSIFICATION OF h_FE

Rank

Range

Marking

P/N

82-180

BCP

120-270

BCQ

180-390

BCR

2SB1188P

2SB1188Q

2SB1188

2012-10

WILLAS ELECTRONIC CORP.

12 3

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