2SB1188

更新时间： 2024-11-11 04:25:51

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
5页	123K
描述
Epitaxial Planar PNP Transistors

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中文翻译

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数据手册

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2SB1188 数据手册

2SB1188

Epitaxial Planar PNP Transistors

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

(Ta=25 C)

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Limits

Unit

Collector-Base Voltage

Vdc

VCBO

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-32

VCEO

VEBO

Vdc

-5

A(DC)

-2

Collector Current

-3

A (Pulse)*

Collector Power Dissipation

0.5

T ,

Tstg

Junction Temperature,

Storage Temperature

-55 to +150

150,

* Single pulse Pw = 100ms

(Ta=25 C unless otherwise noted )

ELECTRICAL CHARACTERISTICS

Parameter

Min

Typ

Symbol

Max

Unit

-40

Collector-Base Breakdown Voltage (Ic=-50uA)

Collector-Emitter Breakdown Voltage (Ic=-1mA)

CBO

-32

-5

CEO

Emitter-Base Breakdown Voltage (I =-50uA)

EBO

ICBO

IEBO

-1

Collector Cutoff Current (V =-20)

Emitter Cutoff Current (V =-4V)

WEITRON

http://www.weitron.com.tw

12 3 4 5

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2SB1188G-P-AB3-R	UTC	获取价格	Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN F
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