Datasheet > 2SB1188

2SB1188

更新时间： 2024-01-26 08:44:24

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	290K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

技术参数
数据手册

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2SB1188 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.61	Base Number Matches：	1

2SB1188 数据手册

2SB1188

TRANSISTOR(PNP)

SOT-89

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Low V^CE(sat).

Complements the 2SD1766

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

-40

Collector-Base Voltage

Collector-Emitter Voltage

-32

-5

Emitter-Base Voltage

Collector Current -Continuous

-2

Collector Power Dissipation

Junction Temperature

Storage Temperature

P_C

500

150

-55-150

℃

T_J

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN TYP MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-32

-5

I_C=-50μA , I_E=0

I_C= -1mA , I_B=0

I_E=-50μA, I_C=0

V_CB=-20 V , I_E=0

V_EB=-4 V , I_C=0

V_CE=-3V, I_C= -0.5A

I_C=-2A, I_B= -0.2A

-1

μA

Emitter cut-off current

I_EBO

-1

h_FE

DC current gain *

390

-0.8

Collector-emitter saturation voltage *

Transition frequency

V_CE(sat)

_CE=-5V, I_C=-0.5A ,f=30MHz

100

MHz

f_T

Output capacitance

V_CB=-10V, I_E=0 ,f=1MHz

C_ob

* ^{Measured using pulse current.}

CLASSIFICATION OF h_FE

Rank

Range

82-180

120-270

BCQ

180-390

Marking

BCP

BCR

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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