Datasheet > 2SB1188

2SB1188

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	548K
描述
SOT-89

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中文翻译

获取价格

数据手册

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2SB1188 数据手册

2SB1188

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to 2SD1766

 Low V_CE(sat)

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

Value

-40

Unit

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

-32

V_EBO

Emitter-Base Voltage

-5

Collector Current

-2

Collector Power Dissipation

500

°C/W

°C

R_θJA

Thermal Resistance From Junction To Ambient

Junction Temperature

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =-50uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-32

-5

，

V(BR)CEO

V(BR)EBO

I_CBO

I_C=-1mA，I_B=0

I_E=-50uA，I_C=0

V_CB=-20V, I_E=0

V_EB=-4V, I_C=0

-1

Emitter cut-off current

I_EBO

V_CE=-3V, I_C=-0.5A

I_C=-2A，I_B=-0.2A

DC current gain

h_FE

390

-0.8

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

V_CE=-5V,I_C=-0.5A, f=30

100

MHz

V_CB=-10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

82-180

BCP

120-270

BCQ

180-390

BCR

Marking

1 / 4

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中文翻译

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