Datasheet > 2SB1188

2SB1188

更新时间： 2024-11-22 14:52:55

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	598K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SB1188 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	32
Collector Current - Continuous：	2	DC current gain - Min：	82
DC current gain - Max：	390	Transition frequency：	80
Package：	SOT-89	Storage Temperature Range：	-55-150
class：	Transistors

2SB1188 数据手册

2SB1188

SOT-89 Transistor(PNP)

1. BASE

SOT-89

2. COLLECTOR

3. EMITTER

4.6

4.4

1.6

1.4

1.8

1.4

2.6

2.4

4.25

3.75

Features

0.8

MIN

0.53

Low VCE(sat).

0.40

0.48

2x)

0.35

1.5

0.44

0.37

0.13

Complements the 2SD1766

3.0

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

-40

Collector-Base Voltage

Collector-Emitter Voltage

-32

-5

Emitter-Base Voltage

Collector Current -Continuous

-2

Collector Power Dissipation

Junction Temperature

Storage Temperature

P_C

500

150

-55-150

℃

T_J

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN TYP MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-32

-5

I_C=-50μA , I_E=0

I_C= -1mA , I_B=0

I_E=-50μA, I_C=0

V_CB=-20 V , I_E=0

V_EB=-4 V , I_C=0

V_CE=-3V, I_C= -0.5A

I_C=-2A, I_B= -0.2A

-1

μA

Emitter cut-off current

I_EBO

-1

h_FE

DC current gain *

390

-0.8

Collector-emitter saturation voltage *

Transition frequency

V_CE(sat)

_CE=-5V, I_C=-0.5A ,f=30MHz

100

MHz

f_T

Output capacitance

V_CB=-10V, I_E=0 ,f=1MHz

C_ob

* Measured using pulse current.

CLASSIFICATION OF h_FE

Rank

Range

82-180

120-270

BCQ

180-390

Marking

BCP

BCR

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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