Datasheet > 2SB1005_2014

2SB1005_2014

更新时间： 2024-09-19 01:19:15

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	153K
描述
Silicon PNP Power Transistors

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中文翻译

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2SB1005_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1005

DESCRIPTION

·With TO-220C package

·High DC Current Gain

·DARLINGTON

APPLICATIONS

·For audio frequency power amplifier

applications

PINNING

DESCRIPTION

Base

Collector; connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

-50

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector power dissipation

Junction temperature

Storage temperature

Open base

-50

Open collector

-5

-4

P_C

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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