Datasheet > 2SB1007

2SB1007

更新时间： 2024-09-18 05:57:31

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	49K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1007 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1007

DESCRIPTION

·With TO-126 package

·Complement to type 2SD1378

·High breakdown voltage

APPLICATIONS

·Low frequency power amplification

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

-80

UNIT

Open base

-80

Open collector

-5

Collector current (DC)

-0.7

1.2

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3

中文翻译

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与2SB1007相关器件

型号	品牌	获取价格	描述	数据表
2SB1007/P	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/PQ	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/PR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/Q	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/QR	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007/R	ROHM	获取价格	Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti
2SB1007_15	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1007_2014	JMNIC	获取价格	Silicon PNP Power Transistors
2SB1007P	ISC	获取价格	暂无描述
2SB1007Q	ISC	获取价格	Transistor