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2SB1007R PDF预览

2SB1007R

更新时间: 2024-11-08 13:04:11
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 81K
描述
Transistor

2SB1007R 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SB1007R 数据手册

 浏览型号2SB1007R的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
2SB1007  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= -80V(Min)  
·Good Linearity of hFE  
·Complement to Type 2SD1378  
APPLICATIONS  
·Designed for low frequency power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
-80  
V
V
V
A
-80  
-5  
Collector Current-Continuous  
-0.7  
10  
Collector Power Dissipation  
@ TC=25℃  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
1
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
isc Websitewww.iscsemi.cn  

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