Datasheet > 2SB1009

2SB1009

更新时间： 2024-09-18 06:19:07

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	42K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1009 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1009

DESCRIPTION

·With TO-126 package

·Complement to type 2SD1380

APPLICATIONS

·For use in low frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

-40

UNIT

Open base

-32

Open collector

-5

Collector current (DC)

-2

T_a=25℃

T_C=25℃

0.1

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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与2SB1009相关器件

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2SB1010/P	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO
2SB1010/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO
2SB1010/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO
2SB1010/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO