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2SB1009 PDF预览

2SB1009

更新时间: 2024-11-09 21:55:27
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
1页 43K
描述
Epitaxial Planar PNP Silicon Transistor

2SB1009 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.62最大集电极电流 (IC):2 A
配置:Single最小直流电流增益 (hFE):82
JESD-609代码:e0极性/信道类型:PNP
最大功率耗散 (Abs):10 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):100 MHzBase Number Matches:1

2SB1009 数据手册

  

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